Publications
- Makeev,KM; Gurin,VN; Derkachenko,LI; Volkov,MP; Kuzanyan,AS; Kuzanyan,AA; Popova,TB; Ivanova,EV Obtaining of crystals of polyelemental solid solutions of rare earth hexaborides Tech. Phys. Lett. 2016 v.42, 1, 01.мар
- Gurin,VN; Osipov,VN; Derkachenko,LI; Korchunov,BN; Popova,TB Formation of a crystallization courtyard in eutectic systems and crystal growth Tech. Phys. Lett. 2014 v.40, 3, 199-202
- Konovalov,MV; Gurin,VN; Derkachenko,LI; Popova,TB; Zamoryanskaya,MV; Burkhardt,U; Grin`,Y Triple immiscibility in the Pb(+Ru)-Zn(+Sn) system Tech. Phys. Lett. 2012 v.38, 7, 627-629
- Popova,TB; Bakaleinikov,LA; Flegontova,EY; Shakhmin,AA; Zamoryanskaya,MV Electron probe microanalysis of heterostructures with nanolayers Semiconductors 2011 v.45, 2, 260-264
- Komkov,OS; Semenov,AN; Firsov,DD; Meltser,BY; Solov`ev,VA; Popova,TV; Pikhtin,AN; Ivanov,SV Optical properties of epitaxial Al(x)In(1-x)Sb alloy layers Semiconductors 2011 v.45, 11, 1425-1429
- Zamoryanskaya,MV; Kuznetsova,YaV; Popova,TB; Shakhmin,AA; Vinokurov,DA; Trofimov,AN Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis J. Electron. Mater. 2010 v.39, 6, 620-624
- Milanova,M; Kakanakov,R; Koleva,G; Vitanov,P; Bakardjieva,V; Zamoryanskaya,M; Popova,T High-quality GalnAsSb and GaAlAsSb layers for thermophotovoltaics grown by liquid-phase epitaxy Solid State Phenom. 2010 v.159, 87-90
- Bakaleinikov,LA; Domracheva,YV; Zamoryanskaya,MV; Kolesnikova,EV; Popova,TB; Flegontova,EY Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique Semiconductors 2009 v.43, 4, 544-549
- Konnikov,SG; Gutkin,AA; Zamoryanskaya,MV; Popova,TB; Sitnikova,AA; Shakhmin,AA; Yagovkina,MA Integrated diagnostics of heterostructures with QW layers Semiconductors 2009 v.43, 9, 1240-1247
- Domracheva,YV; Zamoryanskaya,MV; Popova,TB; Flegontova,EY Electron probe microanalysis and local cathodoluminescence studies of multilayer heterostructures based on InGaN/GaN J. Surf. Invest. X-ray 2009 v.3, 4, 576-581
- Kolesnikova,EV; Kalinina,EV; Sitnikova,AA; Zamoryanskaya,MV; Popova,TB Investigatin of 4H-SiC layers implanted by Al ions Solid State Phenom. 2008 v.131-133, 53-58
- Domracheva,YV; Jmerik,VN; Popova,TB; Zamoryanskaya,MV Cathodoluminescent investigations of InxGa1-xN layers J. Mater. Sci.-Mater. Electron. 2008 v.19, Suppl.1, S319-S323
- Domracheva,YV; Bakaleinikov,LA; Flegontova,EY; Jmerik,VN; Popova,TB; Zamoryanskaya,MV Investigation of In(x)Ga(1-x)Nlayers by local methods Microchim. Acta 2008 v.161, 3-4, 371-375
- Popova,TB; Flegontova,EY; Bakaleinikov,LA; Zamoryanskaya,MV Monte Carlo calculations in X-ray microanalysis of epitaxial layers Microchim. Acta 2008 v.161, 3-4, 459-463
- Popova,TB; Bakaleinikov,LA; Zamoryanskaya,MV; Flegontova,EYu X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a Monte Carlo simulation of electron transport Semiconductors 2008 v.42, 6, 669-674
- Gurin,VN; Nikanorov,SP; Derkachenko,LI; Volkov,MP; Popova,TB; Wilcox,WR; Regel,LL Composition and microhardness of Si-Ge solid solution precipitates in Al-Si-Ge alloys solidified during centrifugation Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process. 2008 v.491, 1-2, 343-348
- Grebenshchikova,EA; Sherstnev,VV; Kizhaev,SS; Popova,TB; Yakovlev,YuP Creating disk-shaped cavity with a vertical side surface for an infrared whispering-gallery-mode laser (lambda~3 mum) Tech. Phys. Lett. 2008 v.34, 11, 953-955
- Ivanov,AS; Vasilev,VI; Sedova,IV; Sorokin,SV; Sitnikova,AA; Konnikov,SG; Popova,TB; Zamoryanskaya,MV Cathodoluminescence of laser A(II)B(VI) heterostructures Semiconductors 2007 v.41, 4, 478-481
- Gurin,VN; Nikanorov,SP; Volkov,MP; Derkachenko,LI; Popova,TB; Korkin,IV; Willcox,BR; Regel,LL Crystallization in the Al-Si, Al-Ge, and Al-Si-Ge systems at centrifugation Tech. Phys. 2005 v.50, 3, 341-346
- Zotova,NV; Kizhaev,SS; Molchanov,SS; Popova,TB; Yakovlev,YuP Long-wavelength light-emitting diodes (lambda=3.4-3.9 mu m) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy Semiconductors 2000 v.34, 12, 1402-1405
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