Publications
- Kaichev,VV; Smirnova,TP; Yakovkina,LV; Ivanova,EV; Zamoryanskaya,MV; Saraev,AA; Pustovarov,VA; Perevalov,TV; Gritsenko,VA Structure, chemistry and luminescence properties of dielectric LaxHf1-xOy films Mater. Chem. Phys. (2016) v.175, 200-205
- Makeev,KM; Gurin,VN; Derkachenko,LI; Volkov,MP; Kuzanyan,AS; Kuzanyan,AA; Popova,TB; Ivanova,EV Obtaining of crystals of polyelemental solid solutions of rare earth hexaborides Tech. Phys. Lett. (2016) v.42, 1, 1-3
- Ivanova,EV; Zamoryanskaya,MV; Pustovarov,VA; Aliev,VS; Gritsenko,VA; Yelisseyev,AP Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen J. Exp. Theor. Phys. (2015) v.120, 4, 710-715
- Mynbaeva,MG; Pechnikov,AI; Sitnikova,AA; Kirilenko,DA; Lavrent`ev,AA; Ivanova,EV; Nikolaev,VI Large-area crystalline GaN slabs Tech. Phys. Lett. (2015) v.41, 3, 246-248
- Ivanova,EV; Zamoryanskaya,MV Investigation of point defects modification in silicon dioxide by cathodoluminescence Solid State Phenom. (2014) v.205-206, 457-461
- Perevalov,TV; Aliev,VS; Gritsenko,VA; Saraev,AA; Kaichev,VV; Ivanova,EV; Zamoryanskaya,MV The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide Appl. Phys. Lett. (2014) v.104, 7, #071904
- Kaichev,VV; Ivanova,EV; Zamoryanskaya,MV; Smirnova,TP; Yakovkina,LV; Gritsenko,VA XPS and cathodoluminescence studies of HfO2, Sc2O3 and (HfO2)(1-x)(Sc2O3)(x) films Eur. Phys. J.-Appl. Phys (2013) v.64, 1, #10302-
- Fitting,HJ; Fitting Kourkoutis,L; Schmidt,B; Liedke,B; Ivanova,EV; Zamoryanskaya,MV; Pustovarov,VA; Zatsepin,AF Electron microscopic imaging of an ion beam mixed SiO2/Si interface correlated with photo- and cathodoluminescence Phys. Status Solidi A-Appl. Mat. (2012) v.209, 6, 1101-1108
- Zamoryanskaya,MV; Ivanova,EV; Sitnikova,AA Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiation Phys. Solid State (2011) v.53, 7, 1474-1480
- Afrosimov,VV; Ber,BY; Zhurikhina,VV; Zamoryanskaya,MV; Kazantsev,DY; Kolesnikova,EV; Lipovskii,AA; Melekhin,VG; Petrov,MI Mass transfer in thermo-electric-field modification of glass-metal nanocomposites Tech. Phys. (2010) v.55, 11, 1600-1608
- Korotcenkov,G; Cho,BK; Nazarov,M; Noh,DY; Kolesnikova,EV Cathodoluminescence studies of un-doped and (Cu, Fe, and Co)-doped tin dioxide films deposited by spray pyrolysis Curr. Appl. Phys. (2010) v.10, 4, 1123-1131
- Kolesnikova,EV; Akopyan,IK; Domracheva,YV; Novikov,BV; Tsagan-Mandjieva,DA; Zamoryanskaya,MV Study of ion diffusion in superionic crystals by EPMA and local CL Superlattices Microstruct. (2009) v.45, 4-5, 369-375
- Bakaleinikov,LA; Domracheva,YV; Zamoryanskaya,MV; Kolesnikova,EV; Popova,TB; Flegontova,EY Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique Semiconductors (2009) v.43, 4, 544-549
- Kolesnikova,EV; Kalinina,EV; Sitnikova,AA; Zamoryanskaya,MV Investigation of 4H-SiC epitaxial layers implanted by Al ions J. Surf. Invest. X-ray (2009) v.3, 3, 411-414
- Nosov,YG; Bakholdin,SI; Krymov,VM; Zamoryanskaya,MV; Kolesnikova,EV; Domracheva,YV Fine structure of faces and imperfection of surface layers of shaped sapphire crystals Bull. Russ. Acad. Sci. Phys. (2009) v.73, 10, 1349-1354
- Kalinina,EV; Zamoryanskaya,MV; Kolesnikova,EV; Lebedev,AA Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions Mater. Sci. Forum (2009) v.615-617, 473-476
- Kolesnikova,EV; Zamoryanskaya,MV Silicon nanoclusters formation in silicon dioxide by high power density electron beam Physica B (2009) v.404, 23-24, 4653-4656
- Fitting,HJ; Kourkoutis,LF; Salh,R; Kolesnikova,EV; Zamoryanskaya,MV; Von_Czarnowski,A; Schmidt,B Silicon cluster aggregation in silica layers Solid State Phenom. (2009) v.156-158, 529-533
- Shustov,DB; Kolesnikova,EV; Kalinina,EV; Skuratov,VA; Zamoryanskaya,MV Far-action defects formation and gettering in 6H-SiC Lely crystals irradiated by Bi Solid State Phenom. (2009) v.156-158, 401-405
- Kolesnikova,EV; Kalinina,EV; Sitnikova,AA; Zamoryanskaya,MV; Popova,TB Investigatin of 4H-SiC layers implanted by Al ions Solid State Phenom. (2008) v.131-133, 53-58
- Burakov,BE; Garbuzov,VM; Kitsay,AA; Zirlin,VA; Petrova,MA; Domracheva,YaV; Zamoryanskaya,MV; Kolesnikova,EV; Yagovkina,MA; Orlova,MP The use of cathodoluminescence for development of durable self-glowing crystals based on solid solutions YPO4—EuPO4 Semiconductors (2007) v.41, 4, 441-444
- Sokolov,RV; Zamoryanskaya,MV; Kolesnikova,EV; Sokolov,VI Evolution of luminescence properties of natural oxide on silicon and porous silicon Semiconductors (2007) v.41, 4, 492-496
- Salh,R; Fitting,L; Kolesnikova,EV; Sitnikova,AA; Zamoryanskaya,MV; Schmidt,B; Fitting,HJ Si and Ge nanocluster formation in silica matrix Semiconductors (2007) v.41, 4, 381-386
- Sokolov,RV; Zamoryanskaya,MV; Kolesnikova,EV; Sokolov,VI Evolution of luminescence properties of natural oxide on silicon and porous silicon Semiconductors (2007) v.41, 4, 482-486
- Kalinina,EV; Skuratov,VA; Sitnikova,AA; Kolesnikova,EV; Tregubova,AS; Shcheglov,MP Structural peculiarities of 4H-SiC irradiated by Bi ions Semiconductors (2007) v.41, 4, 376-380
- Kolesnikova,E; Mynbaeva,M; Sitnikova,A Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates Semiconductors (2007) v.41, 4, 387-390
- Salh,R; von Czarnowski,A; Zamoryanskaya,MV; Kolesnikova,EV; Fitting,HJ Cathodoluminescence of SiOx under-stoichiometric silica layers Phys. Status Solidi A-Appl. Res. (2006) v.203, 8, 2049-2057
- Fitting,HJ; Ziems,T; Salh,R; Zamoryanskaya,MV; Kolesnikova,EV; Schmidt,B; vonCzarnowski,A Cathodoluminescence of wet, dry, and hydrogen-implanted silica films J. Non-Cryst. Solids (2005) v.351, 27-29, 2251-2262
- Kolesnikova,EV; Sitnikova,AA; Sokolov,VI; Zamoryanskaya,MV Modification of silicon oxide by high energy electron beam Solid State Phenom. (2005) v.108-109, 729-733
- Bakaleinikov,LA; Zamoryanskaya,MV; Kolesnikova,EV; Sokolov,VI; Flegontova,EY Silicon dioxide modification by an electron beam Phys. Solid State (2004) v.46, 6, 1018-1023
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