Prof. Maria V. Zamoryanskaya

Education

• 1982 – graduated Leningrad State University, Russia
• 1992 – PhD on solid state physics, Ioffe Institute, St. Petersburg, Russia
• 2013 – PhD habilitate on condenser matter St. Petersburg State University, Russia

Work experience

• 1982 – 1995      Institute “Mehanobr” (All-Union Scientific-Research & Design Institute of Mechanical Processing of Minerals, Leningrad)
• 1995 – present Ioffe Institute, St. Petersburg

• Orekhova,KN; Eurov,DA; Kurdyukov,DA; Golubev,VG; Kirilenko,DA; Kravets,VA; Zamoryanskaya,MV Structural and luminescent properties of Gd oxide doped with Eu3+ embedded in mesopores of SiO2 particles J. Alloy. Compd. (2016) v.678, 434-438
• Kaichev,VV; Smirnova,TP; Yakovkina,LV; Ivanova,EV; Zamoryanskaya,MV; Saraev,AA; Pustovarov,VA; Perevalov,TV; Gritsenko,VA Structure, chemistry and luminescence properties of dielectric LaxHf1-xOy films Mater. Chem. Phys. (2016) v.175, 200-205
• Petrov,D; Zamoryanskaya,M; Guliaeva,K; Lovchinov,V Cathodoluminescence of EuAlO3 and GdAlO3 nanopowders Optik (2016) v.127, 1, 107-109
• Ovsyannikov,VA; Zamoryanskaya,MV; Semencha,AV; Lycheva,KA; Kol`tsova,TS; Tolochko,OV; Blinov,LN Development of bismuth oxide-based nanopreparation for the destruction of malignant neoplasms: Theoretical prerequisites, challenges, and practical approaches Glass Phys. Chem. (2015) v.41, 5, 533-536
• Ivanova,EV; Zamoryanskaya,MV; Pustovarov,VA; Aliev,VS; Gritsenko,VA; Yelisseyev,AP Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen J. Exp. Theor. Phys. (2015) v.120, 4, 710-715
• Kurdyukov,DA; Shishkin,II; Grudinkin,SA; Sitnikova,AA; Zamoryanskaya,MV; Golubev,VG Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films Semiconductors (2015) v.49, 5, 658-662
• Mester,AY; Trofimov,AN; Zamoryanskaya,MV; D`yakonov,AM Hydrocarbon film formed on the surface of a semiconductor irradiated by an electron beam Tech. Phys. (2014) v.59, 10, 1536-1539
• Lebedev,AA; Zamoryanskaya,MV; Davydov,SY; Kirilenko,DA; Lebedev,SP; Sorokin,LM; Shustov,DB; Shcheglov,MP A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures. Mater. Sci. Forum (2014) v.778-780, 247-250
• Lebedev,AA; Zamoryanskaya,MV; Davydov,SY; Kirilenko,DA; Lebedev,SP; Sorokin,LM; Shustov,DB; Shcheglov,MP A study of the intermediate layer in 3C-SiC/6H-SiC heterostructures J. Cryst. Growth (2014) v.396, 100-103
• Kuznetsova,YaV; Usacheva,VP; Zamoryanskaya,MV Cathodoluminescent properties of an Am3+ ion in a matrix of yttrium-aluminum garnet Y3Al5O12 Opt. Spectrosc. (2014) v.116, 3, 408-412
• Perevalov,TV; Aliev,VS; Gritsenko,VA; Saraev,AA; Kaichev,VV; Ivanova,EV; Zamoryanskaya,MV The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide Appl. Phys. Lett. (2014) v.104, 7, #071904-
• Kaichev,VV; Ivanova,EV; Zamoryanskaya,MV; Smirnova,TP; Yakovkina,LV; Gritsenko,VA XPS and cathodoluminescence studies of HfO2, Sc2O3 and (HfO2)(1-x)(Sc2O3)(x) films Eur. Phys. J.-Appl. Phys (2013) v.64, 1, #10302-
• Kalinina,EV; Chuchvaga,NA; Bogdanova,EV; Strel`chuk,AM; Shustov,DB; Zamoryanskaya,MV; Skuratov,VA Optical and electrical properties of 4H-SiC irradiated with Xe ions Semiconductors (2014) v.48, 2, 156-162
• Lebedev,AA; Zamorianskaya,MV; Davydov,SY; Kirilenko,DA; Lebedev,SP; Sorokin,LM; Shustov,DB; Scheglov,MP Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures Semiconductors (2013) v.47, 11, 1539-1543
• Kuznetsova,YV; Zamoryanskaya,MV Unstable luminescence and “memory effect” in nitrides irradiated by electron beam Solid State Phenom. (2014) v.205-206, 435-440
• Ivanova,EV; Zamoryanskaya,MV Investigation of point defects modification in silicon dioxide by cathodoluminescence Solid State Phenom. (2014) v.205-206, 457-461
• Shustov,DB; Lebedev,AA; Lebedev,SP; Nelson,DK; Sitnikova,AA; Zamoryanskaya,MV Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate Semiconductors (2013) v.47, 9, 1267-1270
• Zamoryanskaya,MV; Trofimov,AN Cathodoluminescence of radiative centers in wide-bandgap materials Opt. Spectrosc. (2013) v.115, 1, 79-85
• Kuznetsova,Y; Zamoryanskaya,M Unstable Luminescence of Nitrides under Electron-Beam Irradiation Jpn. J. Appl. Phys. (2013) v.52, 8 Pt 2 SI, #08JJ06-
• Valkovskiy,GA; Durnev,MV; Zamoryanskaya,MV; Konnikov,SG; Krupin,AV; Moroz,AV; Sokolov,NS; Trofimov,AN; Yagovkina,MA Investigation of the structure and luminescence properties of CdF2-CaF2: Eu superlattices on Si(111) Phys. Solid State (2013) v.55, 7, 1498-1504
• Gulyaeva,KN; Trofimov,AN; Zamoryanskaya,MV A study of cathodoluminescent characteristics of YAG:Nd3+ Opt. Spectrosc. (2013) v.114, 5, 709-712
• Burakov,BE; Ipatova,JP; Petrova,MA; Zirlin,VA; Kuznetsova,YV; Zamoryanskaya,MV Development of new generation of durable radio-luminescence emitters based on actinide-doped crystals Procedia Chemistry (2012) v.7, 654-659
• Burakov,BE; Ipatova,JP; Petrova,MA; Kuznetsova,YV; Zamoryanskaya,MV Synthesis of Self-glowing Crystals of Zircon and Zirconia Doped with Plutonium-238 and Terbium Mater. Res. Soc. Symp. Proc. (2012) v.1475, 83-88
• Belyaev,KG; Rakhlin,MV; Jmerik,VN; Mizerov,AM; Kuznetsova,YaV; Zamoryanskaya,MV; Ivanov,SV; Toropov,AA Phase separation in InxGa1-xN (0.10 ‹ x ‹ 0.40) Phys. Status Solidi C Curr. Top. Solid State Phys. (2013) v.10, 3, 527-531
• Chuchvaga,N; Bogdanova,E; Strel`chuk,A; Kalinina,E; Shustov,D; Zamoryanskaya,M; Skuratov,V Electrophysical and optical properties of 4H-SiC irradiated with Xe ions Mater. Sci. Forum (2013) v.740-742, 625-628
• Shakhmin,AA; Sedova,IV; Sorokin,SV; Zamoryanskaya,MV Depth resolved cathodoluminescence and microanalysis of ZnCdSe/ZnSe quantum well heterostructures Superlattices Microstruct. (2013) v.56, 27-34
• Konovalov,MV; Gurin,VN; Derkachenko,LI; Popova,TB; Zamoryanskaya,MV; Burkhardt,U; Grin`,Y Triple immiscibility in the Pb(+Ru)-Zn(+Sn) system Tech. Phys. Lett. (2012) v.38, 7, 627-629
• Shakhmin,AA; Sedova,IV; Sorokin,SV; Zamoryanskaya,MV Cathodoluminescence of ZnSe-based II-VI green laser heterostructures Phys. Status Solidi C Curr. Top. Solid State Phys. (2012) v.9, 8-9, 1840-1843
• Akopyan,IK; Zamoryanskaya,MV; Kuznetsova,YV; Novikov,BV; Tsagan-Mandzhieva,DA Formation of p-n Junctions during Solid-State Chemical Reactions Involving Superionic Crystals Tech. Phys. Lett. (2012) v.38, 6, 540-543
• Fitting,HJ; Fitting Kourkoutis,L; Schmidt,B; Liedke,B; Ivanova,EV; Zamoryanskaya,MV; Pustovarov,VA; Zatsepin,AF Electron microscopic imaging of an ion beam mixed SiO2/Si interface correlated with photo- and cathodoluminescence Phys. Status Solidi A-Appl. Mat. (2012) v.209, 6, 1101-1108
• Zamoryanskaya,MV; Sokolov,VI; Kaydash,AP Formation of silicon nanoclusters, in silicate matrix using an electron beam. (2001) , 322-325
• Ulin,VP; Zamoryanskaya,MV; Soldotenkov,FY; Popova,TB; Konnikov,SG GaAs-Ge non-planar composite epitaxial heterostrutures: LPE growth and cathodoluminescence investigations (2001) , 301-304
• Zamoryanskaya,MV; Ivanova,EV; Sitnikova,AA Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiation Phys. Solid State (2011) v.53, 7, 1474-1480
• Frigeri,C; Shakhmin,AA; Vinokurov,DA; Zamoryanskaya,MV Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods Nanoscale Res. Lett. (2011) v.6, 1, #194-
• Kuznetsova,Y; Baidakova,M; Flegontova,E; Kuznetsov,A; Sitnikova,A; Zamoryanskaya,M Application of the electron probe microanalysis in nitride-based heterostructures investigation Phys. Status Solidi A-Appl. Mat. (2011) v.208, 4, 749-753
• Frigeri,C; Shakhmin,AA; Vinokurov,DA; Zamoryanskaya,MV CL and dark field TEM analysis of composition change at interfaces in InGaP/GaAs junctions grown by MOCVD Phys. Status Solidi C Curr. Top. Solid State Phys. (2011) v.8, 4, 1269-1272
• Popova,TB; Bakaleinikov,LA; Flegontova,EY; Shakhmin,AA; Zamoryanskaya,MV Electron probe microanalysis of heterostructures with nanolayers Semiconductors (2011) v.45, 2, 260-264
• Afrosimov,VV; Ber,BY; Zhurikhina,VV; Zamoryanskaya,MV; Kazantsev,DY; Kolesnikova,EV; Lipovskii,AA; Melekhin,VG; Petrov,MI Mass transfer in thermo-electric-field modification of glass-metal nanocomposites Tech. Phys. (2010) v.55, 11, 1600-1608
• Grushko,YS; Kozlov,VS; Sedov,VP; Kolesnik,SG; Lebedev,VT; Shilin,VA; Khodorkovsky,MA; Artamonova,TO; Shakhmin,AL; Shamanin,VV; Melenevskaya,EY; Konnikov,SG; Zamorianskaya,MV; Tsyrlina,EV; Krzhivitsky,PI MRI-Contrasting System Based on Water-Soluble Fullerene/Gd-Metallofullerene Mixture Fuller. Nanotub. Carbon Nanostruct. (2010) v.18, Part 1, 4-6, 417-421
• Shakhmin,AA; Sedova,IV; Sorokin,SV; Fitting,H-J; Zamoryanskaya,MV Cathodoluminescence of wide-band-gap II-VI quaternary alloys Phys. Status Solidi C Curr. Top. Solid State Phys. (2010) v.7, 6, 1457-1459
• Milanova,M; Kakanakov,R; Koleva,G; Vitanov,P; Bakardjieva,V; Zamoryanskaya,M; Popova,T High-quality GalnAsSb and GaAlAsSb layers for thermophotovoltaics grown by liquid-phase epitaxy Solid State Phenom. (2010) v.159, 87-90
• Zamoryanskaya,MV; Kuznetsova,YaV; Popova,TB; Shakhmin,AA; Vinokurov,DA; Trofimov,AN Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis J. Electron. Mater. (2010) v.39, 6, 620-624
• Salh,R; Kourkoutis,L; Zamoryanskaya,MV; Schmidt,B; Fitting,H Luminescence and Si and Ge nanocluster formation in silica Phys. Procedia (2009) v.2, 2, 467-478
• Zamoryanskaya,MV; Domracheva,YaV; Trofimov,AN; Burakov,BE Cathodoluminescence of actinide in wide gap materials Mater. Res. Soc. Symp. Proc. (2009) v.1193, 15-22
• Burakov,BE; Zamoryanskaya,MV; Domracheva,YV Durable Self-Glowing Crystals as Advanced Materials for Actinide Immobilization Mater. Res. Soc. Symp. Proc. (2009) v.1193, 3-8
• Shustov,DB; Kolesnikova,EV; Kalinina,EV; Skuratov,VA; Zamoryanskaya,MV Far-action defects formation and gettering in 6H-SiC Lely crystals irradiated by Bi Solid State Phenom. (2009) v.156-158, 401-405
• Fitting,HJ; Kourkoutis,LF; Salh,R; Kolesnikova,EV; Zamoryanskaya,MV; Von_Czarnowski,A; Schmidt,B Silicon cluster aggregation in silica layers Solid State Phenom. (2009) v.156-158, 529-533
• Zamoryanskaya,MV Cathodoluminescence of SiO2/Si system Solid State Phenom. (2009) v.156-158, 487-492
• Fitting,H; Kourkoutis,LF; Salh,R; Zamoryanskaya,MV; Schmidt,B Silicon nanocluster aggregation in SiO2:Si layers Phys. Status Solidi A-Appl. Mat. (2010) v.207, 1, 117-123
• Kolesnikova,EV; Zamoryanskaya,MV Silicon nanoclusters formation in silicon dioxide by high power density electron beam Physica B (2009) v.404, 23-24, 4653-4656
• Shustov,D; Kalinin,V; Kalinina,E; Zamoryanskaya,M Far-action radiation defects and gettering effects in 6H-SiC irradiated with Bi ions Physica B (2009) v.404, 23-24, 4761-4763
• Shakhmin,AA; Sedova,IV; Sorokin,SV; Fitting,H; Zamoryanskaya,MV ZnSe based films characterization by cathodoluminescence Physica B (2009) v.404, 23-24, 5016-5018
• Zamoryanskaya,MV; Domracheva,YaV; Shakhmin,AA; Shustov,DB; Trofimov,AN; Konnikov,SG Local cathodoluminescence study of defects in semiconductors and multilayer structures Physica B (2009) v.404, 23-24, 5042-5044
• Kalinina,EV; Zamoryanskaya,MV; Kolesnikova,EV; Lebedev,AA Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions Mater. Sci. Forum (2009) v.615-617, 473-476
• Nosov,YG; Bakholdin,SI; Krymov,VM; Zamoryanskaya,MV; Kolesnikova,EV; Domracheva,YV Fine structure of faces and imperfection of surface layers of shaped sapphire crystals Bull. Russ. Acad. Sci. Phys. (2009) v.73, 10, 1349-1354
• Domracheva,YV; Zamoryanskaya,MV; Popova,TB; Flegontova,EY Electron probe microanalysis and local cathodoluminescence studies of multilayer heterostructures based on InGaN/GaN J. Surf. Invest. X-ray (2009) v.3, 4, 576-581
• Konnikov,SG; Gutkin,AA; Zamoryanskaya,MV; Popova,TB; Sitnikova,AA; Shakhmin,AA; Yagovkina,MA Integrated diagnostics of heterostructures with QW layers Semiconductors (2009) v.43, 9, 1240-1247
• Kolesnikova,EV; Kalinina,EV; Sitnikova,AA; Zamoryanskaya,MV Investigation of 4H-SiC epitaxial layers implanted by Al ions J. Surf. Invest. X-ray (2009) v.3, 3, 411-414
• Salh,R; Kourkoutis,L; Zamoryanskaya,MV; Schmidt,B; Fitting,HJ Ion implantation, luminescence, and cluster growth in silica layers J. Non-Cryst. Solids (2009) v.355, 18-21, 1107-1110
• Bakaleinikov,LA; Domracheva,YV; Zamoryanskaya,MV; Kolesnikova,EV; Popova,TB; Flegontova,EY Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique Semiconductors (2009) v.43, 4, 544-549
• Jmerik,VN; Shubina,TV; Mizerov,AM; Belyaev,KG; Sakharov,AV; Zamoryanskaya,MV; Sitnikova,AA; Davydov,VYu; Kop`ev,PS; Lutsenko,EV; Rzheutskii,NV; Danilchik,AV; Yablonskii,GP; Ivanov,SV AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique J. Cryst. Growth (2009) v.311, 7, 2080-2083
• Shakhmin,AA; Zamoryanskaya,MV; Arsentyev,IN; Konnikov,SG; Vinokurov,DA; Stankevich,AL; Tarasov,IS GaAs quantum well structures investigation by local cathodoluminescence Superlattices Microstruct. (2009) v.45, 4-5, 376-382
• Kolesnikova,EV; Akopyan,IK; Domracheva,YV; Novikov,BV; Tsagan-Mandjieva,DA; Zamoryanskaya,MV Study of ion diffusion in superionic crystals by EPMA and local CL Superlattices Microstruct. (2009) v.45, 4-5, 369-375
• Salh,R; Fitting Kourkoutis,L; Zamoryanskaya,MV; Schmidt,B; Fitting,H Ion implantation and cluster formation in silica Superlattices Microstruct. (2009) v.45, 4-5, 362-368
• Burakov,BE; Domracheva,YaV; Zamoryanskaya,MV; Petrova,MA; Garbuzov,VM; Kitsay,AA; Zirlin,VA Development and synthesis of durable self-glowing crystals doped with plutonium J. Nucl. Mater. (2009) v.385, 1, 134-136
• Trofimov,AN; Zamoryanskaya,MV Characterization of radiative centers in wide-band-gap materials by local cathodoluminescence by the example of europium-doped YAG J. Surf. Invest. X-ray (2009) v.3, 1, 15-20
• Popova,TB; Bakaleinikov,LA; Zamoryanskaya,MV; Flegontova,EYu X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a Monte Carlo simulation of electron transport Semiconductors (2008) v.42, 6, 669-674
• Popova,TB; Flegontova,EY; Bakaleinikov,LA; Zamoryanskaya,MV Monte Carlo calculations in X-ray microanalysis of epitaxial layers Microchim. Acta (2008) v.161, 3-4, 459-463
• Domracheva,YV; Bakaleinikov,LA; Flegontova,EY; Jmerik,VN; Popova,TB; Zamoryanskaya,MV Investigation of In(x)Ga(1-x)Nlayers by local methods Microchim. Acta (2008) v.161, 3-4, 371-375
• Jmerik,VN; Mizerov,AM; Shubina,TV; Plotnikov,DS; Zamoryanskaya,MV; Yagovkina,MA; Domracheva,YaV; Sitnikova,AA; Ivanov,SV Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy Semiconductors (2008) v.42, 5, 616-623
• Domracheva,YV; Jmerik,VN; Popova,TB; Zamoryanskaya,MV Cathodoluminescent investigations of InxGa1-xN layers J. Mater. Sci.-Mater. Electron. (2008) v.19, Suppl.1, S319-S323
• Zamoryanskaya,MV; Konnikov,SG Local cathodoluminescent study of the multilayers semiconductors nanostructures J. Mater. Sci.-Mater. Electron. (2008) v.19, Suppl.1, S362-S365
• Kolesnikova,EV; Kalinina,EV; Sitnikova,AA; Zamoryanskaya,MV; Popova,TB Investigatin of 4H-SiC layers implanted by Al ions Solid State Phenom. (2008) v.131-133, 53-58
• Zamoryanskaya,MV; Sokolov,VI Characterization of SiO2/Si interface by cathodoluminescent method Solid State Phenom. (2008) v.131-133, 629-634
• Rastorguev,AA; Belyi,VI; Smirnova,TP; Yakovkina,LV; Zamoryanskaya,MV; Gritsenko,VA; Wong,H Luminescence of intrinsic and extrinsic defects in hafnium oxide films Phys. Rev. B (2007) v.76, 23, #235315-
• Brunkov,PN; Gutkin,AA; Zamoryanskaya,MV; Khrustalev,VS Cathodoluminescence from dilute GaNxAs1-x solutions (x <= 0.03) Semiconductors (2007) v.41, 11, 1297-1299
• Korotcenkov,G; Nazarov,M; Zamoryanskaya,MV; Ivanov,M Cathodoluminescence emission study of nanocrystalline indium oxide films deposited by spray pyrolysis Thin Solid Films (2007) v.515, 20-21, 8065-8071
• Trofimov,AN; Petrova,MA; Zamoryanskaya,MV Cathodoluminescence properties of yttrium aluminum garnet doped with Eu2+ and Eu3+ ions Semiconductors (2007) v.41, 5, 512-515
• Sokolov,RV; Zamoryanskaya,MV; Kolesnikova,EV; Sokolov,VI Evolution of luminescence properties of natural oxide on silicon and porous silicon Semiconductors (2007) v.41, 4, 482-486
• Ivanov,AS; Vasilev,VI; Sedova,IV; Sorokin,SV; Sitnikova,AA; Konnikov,SG; Popova,TB; Zamoryanskaya,MV Cathodoluminescence of laser A(II)B(VI) heterostructures Semiconductors (2007) v.41, 4, 478-481
• Khrustalev,VS; Bobyl,AV; Konnikov,SG; Maleev,NA; Zamoryanskaya,MV Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging Semiconductors (2007) v.41, 4, 473-477
• Zamoryanskaya,MV; Sokolov,VI Cathodoluminescence study of silicon oxide-silicon interface Semiconductors (2007) v.41, 4, 462-468
• Burakov,BE; Garbuzov,VM; Kitsay,AA; Zirlin,VA; Petrova,MA; Domracheva,YV; Zamoryanskaya,MV; Kolesnikova,EV; Yagovkina,MA; Orlova,MP The use of cathodoluminescence for the development of durable self-glowing crystals based on solid solutions YPO4-EuPO4 Semiconductors (2007) v.41, 4, 427-430
• Salh,R; Fitting,L; Kolesnikova,EV; Sitnikova,AA; Zamoryanskaya,MV; Schmidt,B; Fitting,HJ Si and Ge nanocluster formation in silica matrix Semiconductors (2007) v.41, 4, 381-386
• Trofimov,AN; Petrova,MA; Zamoryanskaya,MV Cathodoluminescence properties of yttrium aluminum garnet doped with Eu2+ and Eu3+ ions Semiconductors (2007) т.41, 5, 530-533
• Sokolov,RV; Zamoryanskaya,MV; Kolesnikova,EV; Sokolov,VI Evolution of luminescence properties of natural oxide on silicon and porous silicon Semiconductors (2007) т.41, 4, 492-496
• Ivanov,AS; Vasilev,VI; Sedova,IV; Sorokin,SV; Sitnikova,AA; Konnikov,SG; Popova,TB; Zamoryanskaya,MV Cathodoluminescence of laser AIIBVI heterostructures Semiconductors (2007) т.41, 4, 488-491
• Khrustalev,VS; Bobyl,AV; Konnikov,SG; Maleev,NA; Zamoryanskaya,MV Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging Semiconductors (2007) т.41, 4, 484-487
• Zamoryanskaya,MV; Sokolov,VI Cathodoluminescence study of silicon oxide/silicon interface Semiconductors (2007) т.41, 4, 475-480
• Burakov,BE; Garbuzov,VM; Kitsay,AA; Zirlin,VA; Petrova,MA; Domracheva,YaV; Zamoryanskaya,MV; Kolesnikova,EV; Yagovkina,MA; Orlova,MP The use of cathodoluminescence for development of durable self-glowing crystals based on solid solutions YPO4—EuPO4 Semiconductors (2007) т.41, 4, 441-444
• Salh,R; Fitting,L; Kolesnikova,EV; Sitnikova,AA; Zamoryanskaya,MV; Schmidt,B; Fitting,HJ Si and Ge nanocluster formation in Silica matrix Semiconductors (2007) т.41, 4, 397-402
• Grigor`ev,LV; Grigor`ev,IM; Zamoryanskaya,MV; Sokolov,VI; Sorokin,LM Transport properties of thermally oxidized porous silicon Tech. Phys. Lett. (2006) v.32, 9, 750-753
• Korotcenkov,G; Nazarov,M; Zamoryanskaya,MV; Ivanov,M; Cirera,A; Shimanoe,K Cathodoluminescence study of SnO2 powders aimed for gas sensor applications Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. (2006) v.130, 1-3, 200-205
• Salh,R; von Czarnowski,A; Zamoryanskaya,MV; Kolesnikova,EV; Fitting,HJ Cathodoluminescence of SiOx under-stoichiometric silica layers Phys. Status Solidi A-Appl. Res. (2006) v.203, 8, 2049-2057
• Astrova,EV; Borovinskaya,TN; Zamoryanskaya,MV; Perova,T Silica micro tubes formed during the patterning of oxidized macroporous silicon Phys. Status Solidi C-Conf. (2005) v.2, 9, 3213-3217
• Kolesnikova,EV; Sitnikova,AA; Sokolov,VI; Zamoryanskaya,MV Modification of silicon oxide by high energy electron beam Solid State Phenom. (2005) v.108-109, 729-733
• Zamoryanskaya,MV; Sokolov,VI The employment of cathodoluminescent method for characterization silicon oxide — Silicon interface Solid State Phenom. (2005) v.108-109, 649-654
• Fitting,HJ; Ziems,T; Salh,R; Zamoryanskaya,MV; Kolesnikova,EV; Schmidt,B; vonCzarnowski,A Cathodoluminescence of wet, dry, and hydrogen-implanted silica films J. Non-Cryst. Solids (2005) v.351, 27-29, 2251-2262
• Zamoryanskaya,MV; Konnikov,SG; Zamoryanskij,AN A high-sensitivity system for cathodoluminescent studies with the Camebax electron probe microanalyzer Pribory i Tekhnika Eksperimenta (2004) v.4, 62-69
• Bakaleinikov,LA; Zamoryanskaya,MV; Kolesnikova,EV; Sokolov,VI; Flegontova,EY Silicon dioxide modification by an electron beam Phys. Solid State (2004) v.46, 6, 1018-1023
• Nazarov,MV; Jeon,DY; Kang,JH; Popovici,E; Muresan,LE; Zamoryanskaya,MV; Tsukerblat,BS Luminescence properties of europium-terbium double activated calcium tungstate phosphor Solid State Commun. (2004) v.131, 5, 307-311
• Astrova,EV; Borovinskaya,TN; Perova,TS; Zamoryanskaya,MV Quartz microtubes based on macroporous silicon Semiconductors (2004) v.38, 9, 1084-1087
• Zamoryanskaya,MV; Konnikov,SG; Zamoryanskii,AN A high-sensitivity system for cathodoluminescent studies with the Camebax electron probe microanalyzer Instrum. Exp. Tech. (2004) v.47, 4, 477-483
• Zamoryanskaya,MV; Sokolov,VI Formation and cathodoluminescence of silicon nanoclusters in silica Mater. Res. Soc. Symp. Proc. (2003) v.737, 481-486
• Ablova,MS; Zamoryanskaya,MV; Sokolov,VI; Khasanov,RI Peculiarities of the current-voltage characteristics of oxidized porous silicon Tech. Phys. Lett. (2003) v.29, 6, 459-460
• Zamoryanskaya,MV; Petrova,MA; Egorov,VY The phase and structural properties of LiYF4 crystals as probed by local methods Russ. J. Inorg. Chem. (2003) v.48, 8, 1244-1251
• Gadzhiev,GM; Golubev,VG; Zamoryanskaya,MV; Kurdyukov,DA; Medvedev,AV; Merz,J; Mintairov,A; Pevtsov,AB; Sel`kin,AV; Travnikov,VV; Sharenkova,NV Fabrication and optical properties of photonic crystals based on Opal-GaP and Opal-GaPN composites Semiconductors (2003) v.37, 12, 1400-1405
• Zamoryanskaya,MV; Sokolov,VI Silicon nanoclusters in thermal oxide films on silicon Solid State Phenom. (2002) v.82-84, 613-616
• Zamoryanskaya,MV; Sokolov,VI; Sitnikova,AA Formation of silicon nanoclusters in silicon oxide using an electron beam Solid State Phenom. (2001) v.78-79, 349-356
• Ulin,VP; Zamoryanskaya,MV; Soldotenkov,FY; Konnikov,SG Cathodoluminescence of the composite nanoscale dendrite — Like GaAs-Ge epitaxial heterostructure Solid State Phenom. (2001) v.78-79, 301-306
• Bogomolov,VN; Gurevich,SA; Zamoryanskaya,MV; Sitnikova,AA; Smirnova,IP; Sokolov,VI Silicon nanocluster formation under electron-beam-induced modification of a silicate matrix Phys. Solid State (2001) v.43, 2, 373-376
• Diaz-Guerra,C; Kurdyukov,DA; Piqueras,J; Sokolov,VI; Zamoryanskaya,MV Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt J. Appl. Phys. (2001) v.89, 5, 2720-2726
• Banshchikov,AG; Gastev,SV; Ichida,M; Nakamura,A; Ofuchi,H; Sokolov,NS; Tabuchi,M; Takeda,Y; Yakovlev,NL; Zamoryanskaya,MV Luminescence spectra and structure of novel MnF2 heterostructures J. Lumines. (2000) v.87-9, 519-521
• Zamoryanskaya,MV; Pis`mennyi,VA Cathodoluminescence characterization of defects in yttrium aluminum garnet doped with Nd Inorg. Mater. (2000) v.36, 6, 620-624
• Zamoryanskaya,MV; Burakov,BE Cathodoluminescence from crystalline phases in a ZrO2-SiO2-CeO2 ceramic Inorg. Mater. (2000) v.36, 8, 844-848
• Diaz-Guerra,C; Piqueras,J; Golubev,VG; Kurdyukov,DA; Pevtsov,AB; Zamoryanskaya,MV Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix Appl. Phys. Lett. (2000) v.77, 20, 3194-3196
• Danishevskii, A.M., Zamoryanskaya, M.V., Sitnikova, A.A., Shuman, V.B., Suvorova, A.A. TEM and cathodoluminescence studies of porous SiC Semiconductor Science and Technology (1998) v.13, 10, 1111-1116
• 6, 622-626
• Zamoryanskaya, M.V., Petrova, M.A., Semenova, T.S. Composition and Cathodoluminescence of Rare-Earth-activated Binary Fluoride Crystals Inorganic Materials (1998) v. 34,
• Zamoryanskaya, M.V., Petrova, M.A., Korovkin, A.M. Effect of Composition Inhomogeneity on the Cathodoluminescence of Y2SiO5 Crystals Doped with Tb and Ce Inorganic Materials (1996) 32 (5), pp. 528-531
• Zamoryanskaya, M.V., Valters, A.Ya. Effect of excitation power on the cathodoluminescence spectra of rate-earth ions in oxide crystals Optics and Spectroscopy (1994) v.76, 4, 546-550