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Laborotory of
Diffusion and Defect
Formation in Semiconductors

Ioffe Institute

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    • M.V. Zamoryanskaya
    • Gennadiy S.Kulikov
    • Tatiana B.Popova
    • E.V. Ivanova
    • A.N. Trofimov
    • D.B. Shustov
    • K.N. Orekhova
    • A.Yu. Mester
    • V.A. Kravetc
    • A.D. Chegodaev
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Vlad A. Kravets

Born on 16.07.1994 in St. Petersburg, Russia

Education

  • 2015      Bachelor of Technical Physics at Saint Petersburg State Polytechnic University, Russia

Work experience

  • 2015 – present   Ioffe Institute, St. Petersburg
Publications

  • Orekhova,KN; Eurov,DA; Kurdyukov,DA; Golubev,VG; Kirilenko,DA; Kravets,VA; Zamoryanskaya,MV Structural and luminescent properties of Gd oxide doped with Eu3+ embedded in mesopores of SiO2 particles J. Alloy. Compd. (2016) v.678, 434-438

Address

Ioffe Physical-Technical Institute,
26 Polytekhnicheskaya,
St. Petersburg, 194021, Russia

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