Denis B. Shustov

Education

• 2004   Bachelor of Physics at Saint Petersburg State University, Russia
• 2007   Master of Physics at Saint Petersburg State University, Russia

Work experience

• 2008 – present   Ioffe Institute, St. Petersburg

• Diploma at the “X Russian Youth Conference on Physics of Semiconductors, Nanostructures Opto- and Nano-electronics in semiconductors” (2008)
• Third place at Contest of the Best Works of Young Scientists in the Ioffe Institute (2008)

• Kalinina,EV; Chuchvaga,NA; Bogdanova,EV; Strel`chuk,AM; Shustov,DB; Zamoryanskaya,MV; Skuratov,VA Optical and electrical properties of 4H-SiC irradiated with Xe ions Semiconductors (2014) v.48, 2, 156-162
• Lebedev,AA; Zamoryanskaya,MV; Davydov,SY; Kirilenko,DA; Lebedev,SP; Sorokin,LM; Shustov,DB; Shcheglov,MP A study of the intermediate layer in 3C-SiC/6H-SiC heterostructures J. Cryst. Growth (2014) v.396, 100-103
• Lebedev,AA; Zamoryanskaya,MV; Davydov,SY; Kirilenko,DA; Lebedev,SP; Sorokin,LM; Shustov,DB; Shcheglov,MP A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures. Mater. Sci. Forum (2014) v.778-780, 247-250
• Chuchvaga,N; Bogdanova,E; Strel`chuk,A; Kalinina,E; Shustov,D; Zamoryanskaya,M; Skuratov,V Electrophysical and optical properties of 4H-SiC irradiated with Xe ions Mater. Sci. Forum (2013) v.740-742, 625-628
• Shustov,DB; Lebedev,AA; Lebedev,SP; Nelson,DK; Sitnikova,AA; Zamoryanskaya,MV Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate Semiconductors (2013) v.47, 9, 1267-1270
• Lebedev,AA; Zamorianskaya,MV; Davydov,SY; Kirilenko,DA; Lebedev,SP; Sorokin,LM; Shustov,DB; Scheglov,MP Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures Semiconductors (2013) v.47, 11, 1539-1543
• Zamoryanskaya,MV; Domracheva,YaV; Shakhmin,AA; Shustov,DB; Trofimov,AN; Konnikov,SG Local cathodoluminescence study of defects in semiconductors and multilayer structures Physica B (2009) v.404, 23-24, 5042-5044
• Shustov,D; Kalinin,V; Kalinina,E; Zamoryanskaya,M Far-action radiation defects and gettering effects in 6H-SiC irradiated with Bi ions Physica B (2009) v.404, 23-24, 4761-4763
• Shustov,DB; Kolesnikova,EV; Kalinina,EV; Skuratov,VA; Zamoryanskaya,MV Far-action defects formation and gettering in 6H-SiC Lely crystals irradiated by Bi Solid State Phenom. (2009) v.156-158, 401-405